dc-electric-field-induced second-harmonic generation in Si(111)- SiO 2 -Cr metal-oxide-semiconductor structures
1996; American Physical Society; Volume: 54; Issue: 3 Linguagem: Inglês
10.1103/physrevb.54.1825
ISSN1095-3795
AutoresO.A. Aktsipetrov, Andrey A. Fedyanin, Е. Д. Мишина, A. N. Rubtsov, C.W. van Hasselt, M.A.C. Devillers, Th. Rasing,
Tópico(s)Photorefractive and Nonlinear Optics
ResumoThe mechanism of dc-electric-field-induced second-harmonic generation (EISH) was studied at the buried Si(111)-${\mathrm{SiO}}_{2}$ interface in transmission through a planar Si-${\mathrm{SiO}}_{2}$-Cr MOS structure. The second-harmonic contribution of the field-induced quadratic polarization generated in the space-charge region is determined. The role of the spatial distribution of the dc electric field inside the silicon space-charge region is demonstrated, as well as the influence of the oxide thickness. We have developed a phenomenological model of the EISH taking into account the interference between field-dependent and field-independent contributions to the nonlinear polarization (nonlinear interference) as well as the retardation of the EISH wave. We show that, due to these interference effects, the minima of the EISH curves do not coincide with the flatband voltage. \textcopyright{} 1996 The American Physical Society.
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