The lattice locations of silicon atoms in delta-doped layers in GaAs
1993; American Institute of Physics; Volume: 73; Issue: 2 Linguagem: Inglês
10.1063/1.353374
ISSN1520-8850
AutoresM. J. Ashwin, M. Fahy, J. J. Harris, R. C. Newman, D. Sansom, R. Addinall, D. S. McPhail, Vijay Kumar Sharma,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoWe have used secondary ion mass spectrometry, local vibrational mode infrared absorption, and electrical characterization to study the incorporation of Si delta-doped planes in GaAs grown by molecular beam epitaxy at 400 °C, in the concentration range 0.01–0.5 monolayers. A correspondence is observed between the density of SiGa donors, the free electron concentration and the total Si coverage, up to a coverage of ∼1013 cm−2; however, above this value, the electron density falls, while [SiGa] remains constant up to a coverage of ∼1014 cm−2, and then falls below the detection limit at 0.5 monolayer coverage. These effects have been interpreted in terms of a model which takes account of Si migration and aggregation on the delta-doped plane during deposition.
Referência(s)