Electroreflectance and photoluminescence studies of (Al x Ga1− x )1− z In z P y As1− y lattice matched to GaAs
1987; American Institute of Physics; Volume: 51; Issue: 21 Linguagem: Inglês
10.1063/1.98555
ISSN1520-8842
AutoresK. Asami, T. Okuno, Shūichi Emura, S. Gonda, Seiji Mukai,
Tópico(s)Semiconductor materials and devices
ResumoElectroreflectance (ER) measurements have been performed on an (AlxGa1−x)1−zInzPyAs1−y pentanary alloy grown on (100) GaAs in the energy range 1.3–3.8 eV at 300 K. Accurate band-gap energy has been determined from ER measurements. Photoluminescence (PL) spectra have been measured in the energy range 1.3–2.0 eV at 300 and 77 K. From the broadening parameters in ER spectra and the full width of half-maxima in PL spectra, the quality of AlGaInPAs has been discussed. The other optical features, E0+Δ0, E1, E1+Δ1, and the spin-orbit splitting parameters Δ0 and Δ1 have been determined.
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