Growth twinning in quartz-homeotypic gallium orthophosphate crystals
1989; Elsevier BV; Volume: 94; Issue: 3 Linguagem: Inglês
10.1016/0022-0248(89)90081-x
ISSN1873-5002
AutoresG. F. Engel, H. Klapper, P. W. Krempl, H. Mang,
Tópico(s)Acoustic Wave Resonator Technologies
ResumoCrystals of quartz-homeotypic gallium orthophosphate have been grown by the slow heating method, by a combination of slow heating and solvent evaporation, by a two chamber growth technique and by the vertical temperature-gradient method. Growth twinning according to the Dauphiné twin law, the Brazil twin law and a "combined" twin law have been found and characterized by means of etching, optical and X-ray topographical methods. Dauphiné (or electrical) twinning occurs as growth sector twinning, originating from the first nucleated seed and is often recognizable by morphological features (re-entrant edges, interpenetration of rhombohedra). Brazil (or optical) twinning is polysynthetic, and is correlated with other growth defects.
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