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Silicon ion implanted PMMA for soft electronics

2008; Elsevier BV; Volume: 9; Issue: 6 Linguagem: Inglês

10.1016/j.orgel.2008.08.003

1878-5530

Georgi B. Hadjichristov, V.K. Gueorguiev, T. Ivanov, Yordan G. Marinov, Victor G. Ivanov, E. Faulques,

Ion-surface interactions and analysis

The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 1014 to 1017 ions/cm2 were examined. The electrical response of Si+-implanted PMMA was studied by direct current (DC) and alternating current (AC) measurements and was related to the structure formed in the host polymer. In addition to the sizable enhancement of the conductivity with the implantation dose, the field-effect transconductance found in Si+-implanted PMMA shows the potential of this material for soft-electronic applications.