Portal de Periódicos da CAPES

Fermi level pinning by interface states: A calculation of the height and the shape of the Schottky barrier

1985; Elsevier BV; Volume: 28; Issue: 5 Linguagem: Inglês

10.1016/0038-1101(85)90114-5

1879-2405

J.M. Palau, Abu Bakar Md. Ismail, L. Lassabatère,

Surface and Thin Film Phenomena

A calculation of the potential distribution of the space charge region of a metal-semiconductor contact is proposed, which is based on the theories of Schottky and Bardeen. Inspired by the defect model of Spicer et al., we assume that interface states are spread over several atomic layers inside the semiconductor. Thus the “neutral level” of Bardeen can be reached at the most buried states. Particular attention is paid to conditions for which such Fermi level pinning is possible.