Annealing of Mg implants in GaAs using incoherent radiation
1984; Institution of Engineering and Technology; Volume: 20; Issue: 11 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresR.T. Blunt, Roy Szweda, M. S. M. Lamb, A. G. Cullis,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoResults of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
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