Direct growth of GaN on (0 0 0 1) 6H–SiC by low-pressure MOVPE with a flow channel
1998; Elsevier BV; Volume: 189-190; Linguagem: Inglês
10.1016/s0022-0248(98)00201-2
ISSN1873-5002
AutoresMakoto Kurimoto, Masao Shibata, Jun Yamamoto, M. Tsubamoto, Tohru Honda, Hideo Kawanishi,
Tópico(s)ZnO doping and properties
ResumoAbstract Direct growth of a GaN layer on (0 0 0 1) 6H–SiC by low-pressure MOVPE (LP-MOVPE) with a flow channel is investigated. In this study, we have reported that the surface morphologies of GaN epitaxial layer depend on the gas flow velocity. A high flow velocity is required for a two-dimensional (2D) growth.
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