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High Aspect Ratio Deep Via Holes in InP Etched Using Cl2 / Ar Plasma

1995; Institute of Physics; Volume: 142; Issue: 11 Linguagem: Inglês

10.1149/1.2048439

1945-7111

K. K. Ko, S. W. Pang,

Advancements in Semiconductor Devices and Circuit Design

Dry etching of using a plasma generated by an electron cyclotron resonance source has been studied. A fast etch rate (2.7 μm/min) with vertical profile and smooth surface morphology was achieved at room temperature for via holes that are 30 μm wide and 110 μm deep. etch rate has been found to increase with microwave power, temperature, RF power, and pressure. The results indicate that high temperature is not necessary to etch using when the reactive species densities are high at high microwave power. Compared to other compound semiconductors, has the highest etch rate, followed by , , , and . In situ monitoring using mass spectrometry was used to provide precise control of the etch initiation time and the etch depth. Etch initiation time was found to decrease with ion energy. Since devices based on via holes usually have Ti/Au metallization layer on the front side, the and signals were used for end point detection. Etching can be controlled to stop with <50 nm Ti removed after reaching the bottom of the via holes.