Single atom Si nanoelectronics using controlled single-ion implantation
2005; Elsevier BV; Volume: 78-79; Linguagem: Inglês
10.1016/j.mee.2004.12.096
ISSN1873-5568
AutoresM. Mitić, S. E. Andresen, Chih Hwan Yang, T. Hopf, Victor Chan, E. Gauja, Fay E. Hudson, T. M. Buehler, R. Brenner, A. J. Ferguson, C. I. Pakes, S.M. Hearne, G Yu Tamanyan, David Reilly, A. R. Hamilton, David N. Jamieson, Andrew S. Dzurak, Robert G. Clark,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoWe present recent developments in controlled single-ion implantation techniques. A low energy (14keV) ion-beam is used to produce shallow phosphorus implants in high-purity Si. Single atom control during implantation is achieved by monitoring on-chip p-i-n detectors, integrated within the device structure, while positional accuracy of 20nm is achieved via a nanolithographic resist mask. This technique has been used to implant only two phosphorus dopant atoms for use as charge-based Si:P quantum bits (qubits). Voltages applied to precisely aligned surface electrodes control the double-donor system, and dual single-electron transistors (SETs) provide readout with spurious signal rejection. Preliminary low temperature measurements on devices implanted with less than 10 dopant atoms demonstrate isolated charge transfer events.
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