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Electronic structure of Si(100)2×1-Cl studied with angle-resolved photoemission

1990; American Physical Society; Volume: 42; Issue: 15 Linguagem: Inglês

10.1103/physrevb.42.9534

1095-3795

L. S. O. Johansson, R. I. G. Uhrberg, R. Lindsay, P.L. Wincott, G. Thornton,

Semiconductor materials and devices

The chlorine-chemisorbed Si(100)2\ifmmode\times\else\texttimes\fi{}1-Cl surface has been studied with polarization-dependent angle-resolved photoemission, employing single-domain surfaces obtained from vicinal Si(100) samples. Contributions from seven Cl-induced surface-state bands are identified in the photoemission spectra in the energy range 5.1--9.4 eV below the Fermi level. One band, at about -8.2 eV initial energy, is attributed to Si-Cl bonding orbitals of mainly ${\mathit{p}}_{\mathit{z}}$ character, while four of the higher-energy bands are associated with Cl nonbonding orbitals of mainly ${\mathit{p}}_{\mathit{x}}$,${\mathit{p}}_{\mathit{y}}$ character. A very weak structure at about -9.4 eV initial energy is attributed to Si(s)-Cl(${\mathit{p}}_{\mathit{z}}$) bonding states. The polarization dependence of the five upper bands in the \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-J\ifmmode\bar\else\textasciimacron\fi{} and \ensuremath{\Gamma}\ifmmode\bar\else\textasciimacron\fi{}-J\ifmmode\bar\else\textasciimacron\fi{}' directions of the surface Brillouin zone indicates mirror-plane symmetries consistent with a symmetric dimer model.