High power nitride based light emitting diodes with Ni/ITO p-type contacts
2003; Elsevier BV; Volume: 47; Issue: 9 Linguagem: Inglês
10.1016/s0038-1101(03)00108-4
ISSN1879-2405
AutoresYun-Hsuan Lin, Shoou‐Jinn Chang, Yifan Su, C. S. Chang, Shih‐Chang Shei, J.C. Ke, H. M. Lo, S. C. Chen, Chin‐Wei Kuo,
Tópico(s)Metal and Thin Film Mechanics
ResumoLarge size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.
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