Artigo Revisado por pares

Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide

2001; Elsevier BV; Volume: 175-177; Linguagem: Inglês

10.1016/s0168-583x(00)00542-5

ISSN

1872-9584

Autores

William J. Weber, Weilin Jiang, Suntharampillai Thevuthasan,

Tópico(s)

Integrated Circuits and Semiconductor Failure Analysis

Resumo

Ion-beam-induced disordering in single crystals of 6H–SiC has been investigated for a wide range of ion species (from H+ to Au2+) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is of the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3±0.15 eV (Stage I), 1.3±0.25 eV (Stage II) and 1.5±0.3 eV (Stage III).

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