Modification of valence-band symmetry and Auger threshold energy in biaxially compressed InAs 1 − x <mml:mrow…
1995; American Physical Society; Volume: 51; Issue: 11 Linguagem: Inglês
10.1103/physrevb.51.7310
ISSN1095-3795
AutoresS. R. Kurtz, R. M. Biefeld, L. R. Dawson,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoStrained-layer superlattices (SLS's) with biaxially compressed ${\mathrm{InAs}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Sb}}_{\mathit{x}}$ were characterized using magnetophotoluminescence and compared with unstrained ${\mathrm{InAs}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Sb}}_{\mathit{x}}$ alloys. Holes in the SLS exhibited a decrease in effective mass, approaching that of the electrons. In the two-dimensional limit, a large increase in the Auger threshold energy accompanies this strain-induced change in SLS valence-band symmetry. Correspondingly, the activation energy for nonradiative recombination in the SLS's displayed a marked increase compared with that of the unstrained alloys. Strained-layer superlattices and alloy activation energies are in agreement with estimated Auger threshold energies.
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