Portal de Periódicos da CAPES

Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

1984; Elsevier BV; Volume: 119; Issue: 1 Linguagem: Inglês

10.1016/0040-6090(84)90160-3

1879-2731

John A. Thornton, James L. Lamb,

Semiconductor materials and devices

Substrate heating energies per atom deposited are reported for planar magnetron sputtering of aluminum, chromium, nickel, copper, molybdenum, indium, tantalum, tungsten and platinum in argon as well as for aluminum and chromium sputtered in O2. Data are also reported for cylindrical magnetron sputtering of niobium, silver, tantalum, tungsten and Pb-Sn in argon as well as for molybdenum sputtered in neon, argon, krypton and xenon. The planar and cylindrical magnetron heating rates were comparable. The heating energies for argon sputtering ranged from 10–15 eV per deposited atom for the light metals to almost 100 eV atom-1 for tantalum and tungsten. The implied reactive sputtering heating energies were about 500 eV molecule-1 for Cr2O3 and 1150 eV molecule-1 for Al2O3. Special experiments were conducted to examine the contributions to the substrate heating of plasma species and ion neutralization and reflection at the cathode. The data indicate that charged plasma species do not contribute significantly to the heating but that neutralized and reflected ions play a significant role in the planar as well as the cylindrical cases despite the differences in cathode geometry.