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Magnetoresistance measurements of V3Si evidence for precursor effects of the martensitic transformation

1984; Elsevier BV; Volume: 50; Issue: 5 Linguagem: Inglês

10.1016/0038-1098(84)90648-3

1879-2766

X. Zotos, O. Laborde, J.P. Sénateur,

Phase-change materials and chalcogenides

We report magnetoresistivity measurements on transforming and non-transforming V3Si. The martensitic structural transformation (Tm ≊ 21 K) is induced by annealing. The transforming sample shows large deviations from the Köhler's rule [Δϱ/ϱ = ƒ(H/ϱ)], at temperatures much higher than Tm. They are attributed to precursor effects of the transition, previously observed by other techniques, and are interpreted in terms of the development of different relaxation times for the scattering of the electrons.