Electrical and optical properties of amorphous boron and amorphous concept for ß-rhombohedral boron
1974; Elsevier BV; Volume: 16; Issue: 2 Linguagem: Inglês
10.1016/0022-3093(74)90127-6
ISSN1873-4812
AutoresAlexander A. Berezin, O. A. Golikova, М. М. Казанин, T. Khomidov, D. N. Mirlin, А. В. Петров, A.S. Umarov, V. K. Zaĭtsev,
Tópico(s)Boron and Carbon Nanomaterials Research
ResumoMeasurements of the conductivity (σ), thermoelectric power (S) and thermal conductivity (κ) of amorphous boron are made over wide temperature ranges (T = 77–850 K for σ, T = 300–850 K for S and T = 80–1100 K for κ). The room temperature spectral dependencies of the reflection (R) and absorption (α) coefficients are determined for the wavelength intervals 2–25 μm and 1.3–25 μm respectively. The I–V characteristics are also studied and shown to be consistent with the Poole-Frenkel law. The value obtained for the thermal energy gap of amorphous boron (1.3 eV) is slightly smaller than that of crystal ß-rhombohedral boron (1.4 eV). The temperature dependence of the electrical conductivity can be satisfactorily described by the Mott law ln σ ≈ −(T0/T)14, where T0 ⋍ 108K. This gives an estimate, N ≈ 1018 cm−3, for the concentration of trapping levels responsible for the hopping conduction. The value ϵ0 ⋍ 9 is found from the spectral dependence of R while α has Urbach-like character − α ≈ exp (h̵ ω/Δ), where Δ ⋍ 0.19 eV. A comparison is made between amorphous boron and crystalline ß-rhombohedral boron. Because of the very complex crystal structure and the large dimensions of the unit cell of ß-boron, some of its physical properties could be qualitatively described on the basis of the so-called ‘amorphous concept’.
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