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Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

2011; Institute of Electronics Engineers of Korea; Volume: 11; Issue: 4 Linguagem: Inglês

10.5573/jsts.2011.11.4.272

2233-4866

Jung-Shik Jang, Woo Young Choi,

Integrated Circuits and Semiconductor Failure Analysis

The ambipolar behavior of tunneling fieldeffect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively, and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using ν.