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Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010; Elsevier BV; Volume: 94; Issue: 12 Linguagem: Inglês

10.1016/j.solmat.2010.08.004

1879-3398

Sun‐Young Park, Hye‐Ri Kim, Yong‐Jin Kang, Dongho Kim, Jae‐Wook Kang,

Thin-Film Transistor Technologies

This paper reports the effects of p-type NiO thin films deposited by magnetron sputtering on performance of organic solar cells (OSCs). The effects of a p-type NiO interfacial layer between indium tin oxide (ITO) and active layer were examined systematically to increase the efficiency and stability of OSCs. Characterization of the sputter-deposited NiO film revealed it to be a p-type semiconductor with a resistivity of 2.7×10−2 Ω cm. Its conduction type was demonstrated by measuring the Seebeck coefficient (+70 μV/K). The insertion of a 5 nm-thick NiO layer resulted in a power conversion efficiency and a fill factor as high as 2.8±0.1% and 0.62±0.02, respectively, which are comparable to OSCs adopting the conventional conducting polymer, PEDOT:PSS. Furthermore, lifetime of the OSCs adopting the NiO layer was 3 times higher than that of the conventional PEDOT:PSS.