Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
2002; American Institute of Physics; Volume: 81; Issue: 25 Linguagem: Inglês
10.1063/1.1528729
ISSN1520-8842
AutoresLaurent Diehl, S. Menteşe, E. Müller, Detlev Grützmacher, H. Sigg, U. Gennser, I. Sagnes, Y. Campidelli, O. Kermarrec, D. Bensahel, Jérôme Faist,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoIntersubband electroluminescence from strain-compensated Si/Si0.2Ge0.8 quantum cascade (QC) structures, consisting of up to 30 periods grown by molecular beam epitaxy on Si0.5Ge0.5 pseudosubstrates is reported. The design of the active region is based on a so-called “bound-to-continuum transition.” The intersubband radiation is emitted at a wavelength of 7 μm and is polarized, as expected for intersubband transitions between heavy hole states. A good agreement with photocurrent measurements is also found.
Referência(s)