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Depth Profiling of Si-SiO 2 Interface Structures

1986; Institute of Physics; Volume: 25; Issue: 4R Linguagem: Inglês

10.1143/jjap.25.544

1347-4065

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Kikuo Yamabe, Takeo Hattori,

Thermography and Photoacoustic Techniques

The Si-SiO 2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. 1) The appicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.