Shallow-junction p +- n germanium avalanche photodiodes (APD’s)
1979; American Institute of Physics; Volume: 34; Issue: 12 Linguagem: Inglês
10.1063/1.90704
ISSN1520-8842
AutoresT. Kaneda, Hirokazu Fukuda, T. Mikawa, Y. Banba, Y. Toyama, H. Ando,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoLow-noise and high-quantum-efficiency germanium APD’s have been investigated by a p+-n structure. Boron implantation was used to form the p+ layer. Shallow p+-n junctions have a lower excess noise that n+-p junctions because holes have a higher ionization coefficient in germanium, and these p+-n diodes have a higher hole-to-electron collection efficiency. Excess noise factors F≈7 at a multiplication factor of 10 are obtained at wavelength of ∼1.4 μm, whereas F≈11 for n+-p diodes. An internal quantum efficiency of ∼80% is obtained at 1.15 μm.
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