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Statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes including the effect of dead space

1992; Institute of Electrical and Electronics Engineers; Volume: 10; Issue: 10 Linguagem: Inglês

10.1109/50.166785

1558-2213

Majeed M. Hayat, Bahaa E. A. Saleh,

Terahertz technology and applications

The statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes (APDs) are determined, including the effect of dead space, i.e., the minimum distance that a newly generated carrier must travel in order to acquire sufficient energy to become capable of causing an impact ionization. Recurrence equations are derived for the first and second moments and the probability distribution function of a set of random variables that are related, in a deterministic way, to the random impulse response function of the APD. The equations are solved numerically to produce the mean impulse response, the standard deviation, and the signal-to-noise ratio (SNR), all as functions of time. >