Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics
2001; American Institute of Physics; Volume: 79; Issue: 20 Linguagem: Inglês
10.1063/1.1418266
ISSN1520-8842
AutoresShriram Ramanathan, David A. Muller, G. D. Wilk, Chang Man Park, Paul C. McIntyre,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoIn this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO2 by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light). Capacitance–voltage (C–V) measurements were performed at multiple frequencies on capacitors fabricated from a ZrO2–SiO2 stack. It was found that the C–V curves from samples grown by natural oxidation were distorted and showed severe frequency dependence while samples grown with UV light exposure under otherwise identical conditions had superior electrical behavior. Loss tangent measurements and detailed electron energy loss spectroscopy studies performed on the two samples revealed that the sample grown by natural oxidation was highly oxygen deficient, and this led to its poor electrical properties.
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