Improved device performance using a semi-transparent p -contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode
1999; American Institute of Physics; Volume: 75; Issue: 14 Linguagem: Inglês
10.1063/1.124942
ISSN1520-8842
AutoresC.J. Collins, T. Li, A.L. Beck, Russell D. Dupuis, Joe C. Campbell, John C. Carrano, M. Schurman, Ian T. Ferguson,
Tópico(s)Photocathodes and Microchannel Plates
ResumoWe report on the improved device performance of GaN-based ultraviolet heterojunction photodiodes using a semi-transparent p-contact device structure. At a reverse bias of 10 V, these photodiodes exhibit a low dark current density of 0.3 nA/cm2. The external quantum efficiency is 38% at the band edge, with only a slight decrease at the shorter wavelengths. The forward current is >10 mA at Vf=5 V. Fitting of the forward current–voltage data to the diode equation yields a very low series resistance (Rs=62Ω), which results in a very fast decay of the time response. The improved performance afforded by the thin, semi-transparent, p-contact layer is due to an increase in the uniformity of the lateral field distribution.
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