Portal de Periódicos da CAPES

Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

2013; IEEE Photonics Society; Volume: 20; Issue: 4 Linguagem: Inglês

10.1109/jstqe.2013.2255587

1558-4542

Weiwei Mu, Peigen Zhang, Jun Xu, Shenghua Sun, Jie Xu, Wei Li, Kunji Chen,

Nanowire Synthesis and Applications

Light emitting devices based on Si quantum dots/SiO 2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.