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Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

2000; American Institute of Physics; Volume: 77; Issue: 19 Linguagem: Inglês

10.1063/1.1323542

1520-8842

Yen-Sheng Lin, Kung-Jeng Ma, Chih‐Wei Hsu, Shih-Wei Feng, Yung-Chen Cheng, Chi-Chih Liao, C. C. Yang, Chang-Cheng Chou, Chia-Ming Lee, Jen-Inn Chyi,

ZnO doping and properties

The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%–25% (grown with metal–organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.