The growth of mercury cadmium telluride by organometallic vapor phase epitaxy
1986; Elsevier BV; Volume: 75; Issue: 2 Linguagem: Inglês
10.1016/0022-0248(86)90033-3
ISSN1873-5002
AutoresIshwara B. Bhat, S. K. Ghandhi,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoHg1−xCdxTe layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers is provided in this paper. Specular surfaces of Hg1−xCdxTe with x≥0.1 were obtained on (100) 3°→(110) oriented CdTe substrates. The morphology of the layers with various compositions is also presented here. Both n-type and p-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 to 300 K. The mobility of n-type of Hg0.81Cd0.19Te layers, measured at 2.1 kG was 3.0×105 cm2/V·s at 60 K, falling to 2×105 cm2/V·s at 10 K. ρ-Type layers were also grown, and are described in this paper. Anomalous behavior was observed in some of these p-type layers. Reasons for this behavior are presented in this paper.
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