Portal de Periódicos da CAPES

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si / SiO 2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

2010; American Physical Society; Volume: 104; Issue: 4 Linguagem: Inglês

10.1103/physrevlett.104.046402

1092-0145

Felix Hoehne, Hans Huebl, Bastian Galler, M. Stutzmann, Martin S. Brandt,

Semiconductor materials and interfaces

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multifrequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and $\mathrm{Si}/{\mathrm{SiO}}_{2}$ interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.