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The role of gas-phase reactions in boron nitride growth by chemical vapor deposition

1993; Elsevier BV; Volume: 163; Issue: 1 Linguagem: Inglês

10.1016/0921-5093(93)90587-5

1873-4936

Stanley Middleman,

MXene and MAX Phase Materials

The rate of growth of thin solid films by chemical vapor deposition (CVD), as well as the stoichiometry of the deposited solid, is explored by assuming a chemical mechanism for the deposition reactions and selecting a dynamic model for the reactor. The specific case of boron nitride growth from diborabe is illustrated. Competition among gas phase and surface reactions will give rise to complex interrelationships of growth rate and stoichiometry to the flow rates of reactants. The specific model illustrated explains qualitatively, and to some degree quantitatively, the observations in the literature on the boron nitride/diborane system.