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Measurement of the radiative lifetime of the A 2 Σ ( v ′ = 0 ) state of SiF

1976; American Institute of Physics; Volume: 14; Issue: 3 Linguagem: Inglês

10.1103/physreva.14.1146

0556-2791

Steven J. Davis, Steven G. Hadley,

Photochemistry and Electron Transfer Studies

We report a measurement of the ${A}^{2}\ensuremath{\Sigma}({v}^{\ensuremath{'}}=0)$ radiative lifetime in silicon monofluoride. In this experiment, SiF radicals were produced by the microwave discharge of Si${\mathrm{F}}_{4}$. The ground-state SiF molecules were then excited to the ${A}^{2}\ensuremath{\Sigma}({v}^{\ensuremath{'}}=0)$ state by a dye-laser pulse. The resultant fluorescence was recorded and its decay rate measured. The measured lifetime was 0.23 \ifmmode\pm\else\textpm\fi{} 0.02 \ensuremath{\mu}sec and was independent of Si${\mathrm{F}}_{4}$ pressure in the range 0.05 to 1.0 Torr.