The growth and physical properties of high quality pseudomorphic InxGa1-xAs HEMT structures
1993; Elsevier BV; Volume: 127; Issue: 1-4 Linguagem: Inglês
10.1016/0022-0248(93)90692-p
ISSN1873-5002
AutoresD. R. Mace, Mike Grimshaw, D. A. Ritchie, A. C. Churchill, M. Pepper, G. A. C. Jones,
Tópico(s)Quantum and electron transport phenomena
ResumoA series of high quality modulation doped GaAs-A1GaAs heterostructures incorporating a strained 10 nm InxGa1-xAs layer at the hetero-interface have been grown. The indium mole fraction, x, was varied from 0 (the control) to 0.25 in 0.05 steps. Other growth conditions were unaltered for all wafers. The variation of electronic and structural properties of the wafers was measured as a function of x with a view to optimizing the structure for use in one-dimensional ballistic transport measurements.
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