Stability of oxides grown on tantalum silicide surfaces
1986; American Institute of Physics; Volume: 60; Issue: 9 Linguagem: Inglês
10.1063/1.337699
ISSN1520-8850
Autores Tópico(s)Semiconductor materials and devices
ResumoThe oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.
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