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A study of thin silicon dioxide films using infrared absorption techniques

1982; American Institute of Physics; Volume: 53; Issue: 6 Linguagem: Inglês

10.1063/1.331239

1520-8850

Ian W. Boyd, J.I.B. Wilson,

Thin-Film Transistor Technologies

Infrared transmission spectra of a series of silicon dioxide (SiO2) films grown on silicon wafers from a HCl and O2 gas mixture at 850 °C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer’s Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm−1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm−1 has been found, moving from an asymptotic limit maximum of ∼1070 cm−1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.