Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4 H silicon carbide from the donor-acceptor pair emission
2005; American Physical Society; Volume: 71; Issue: 24 Linguagem: Inglês
10.1103/physrevb.71.241201
ISSN1550-235X
AutoresIvan G. Ivanov, Anne Henry, Erik Janzén,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoThis paper deals with fitting the donor-acceptor pair luminescence due to $\mathrm{P}\ensuremath{-}\mathrm{Al}$ pairs in $4H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$. It was possible to identify P at the Si cubic site as the shallower donor with ionization energy of $60.7\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$, as well as to distinguish the contribution in the spectrum from pairs involving this donor and Al acceptors from both the cubic and hexagonal lattice sites, leading to justification of their ionization energies. The case of $\mathrm{N}\ensuremath{-}\mathrm{Al}$ pair luminescence was revisited and the ionization energy of the deeper ${\mathrm{N}}_{\mathrm{c}}$ donor at the cubic site was determined, $125.5\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$.
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