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A silicon microstrip gas chamber

1994; Elsevier BV; Volume: 348; Issue: 2-3 Linguagem: Inglês

10.1016/0168-9002(94)90766-8

1872-9576

J. van der Marel, A. van den Bogaard, C.W.E. van Eijk, R.W. Hollander, W.J.C. Okx, P.M. Sarro,

Plasma Diagnostics and Applications

We are manufacturing microstrip gas chambers (MSGC) on silicon with an insulating SiO2 layer. To study the effect of the sheet resistance of the SiO2 on the operation of the detector several processes to modify the SiO2 layer have been investigated: ion implantation, boron and phosphorus diffusion, phosphosilicate glass evaporation and polycrystalline silicon deposition. The dependence of the gas gain on the potentials of the different electrodes and the long term stability have been studied.