Epitaxial growth of ferroelectric T.B. Sr1−xBaxNb2O6 films for optoelectronic applications
1987; Elsevier BV; Volume: 22; Issue: 8 Linguagem: Inglês
10.1016/0025-5408(87)90239-x
ISSN1873-4227
AutoresRatnakar R. Neurgaonkar, Edward T. H. Wu,
Tópico(s)Photorefractive and Nonlinear Optics
ResumoThis paper reports preliminary results of epitaxial growth of tetragonal ferroelectric Sr1−xBaxNb2O6 (SBN) thin films by the liquid phase epitaxial (LPE) technique. Several V5+-containing flux systems were investigated; however, the BaV2O6 flux was found to be the most effective in producing SBN solid-solution films. Although the film growth rate was much faster on the (001) direction, film quality was best on the (100) and (110) directions with thickness in the range 5 to 20 μm. Lattice constant measurements indicate that the films are Ba2+-rich, with compositions close to Sr0.46Ba0.54Nb2O6 and Sr0.4Ba0.6Nb2O6. This technique offers a unique opportunity to develop simple or complex bronze films of superior quality for several optoelectronic device applications.
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