Elimination of misfit dislocations in Si1− x Ge x /Si heterostructures by limited-area molecular-beam epitaxial growth
1992; American Institute of Physics; Volume: 71; Issue: 12 Linguagem: Inglês
10.1063/1.350440
ISSN1520-8850
AutoresAkio Nishida, Kiyokazu Nakagawa, Eiichi Murakami, Masanobu Miyao,
Tópico(s)Ion-surface interactions and analysis
ResumoLimited-area molecular-beam epitaxial growth of Si1−xGex films, on a Si substrate with patterned SiO2, has been studied in order to eliminate misfit dislocations in Si1−xGex/Si heterostructures. This method is found to dramatically reduce misfit dislocations in Si1−xGex films. Hence, a thicker Si1−xGex film can be grown, without introducing misfit dislocations, on a Si substrate with patterned SiO2 than on a Si substrate without patterned SiO2. This phenomenon is attributed to the blocking of misfit dislocation extension and to a partial relaxation of the residual strain in the boundary between the crystal and polycrystalline Si1−xGex film.
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