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Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion

1994; American Institute of Physics; Volume: 75; Issue: 1 Linguagem: Inglês

10.1063/1.355855

1520-8850

W. Zagoźdźon-Wosik, P. Grabiec, G. Lux,

Thermal properties of materials

Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the processed wafer. Doping in RTD is controlled by the thickness of the SOD and its structure, which depends on low-temperature baking. Experimental results of secondary-ion-mass spectroscopy analyses and sheet resistance indicate that diffusion coefficients of phosphorus in the SOD during RTD are considerably larger than in thermal oxides.