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Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing

2013; American Chemical Society; Volume: 13; Issue: 9 Linguagem: Inglês

10.1021/nl402180k

1530-6992

Bin Chen, Jun Wang, Qiang Gao, Yujie Chen, Xiaozhou Liao, Chunsheng Lu, Hark Hoe Tan, Yiu‐Wing Mai, Jin Zou, Simon P. Ringer, Huajian Gao, C. Jagadish,

Semiconductor materials and interfaces

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.