Four-wave mixing via optically generated free carriers in Hg1− x Cd x Te
1982; American Institute of Physics; Volume: 41; Issue: 7 Linguagem: Inglês
10.1063/1.93619
ISSN1520-8842
Autores Tópico(s)Advanced Fiber Laser Technologies
ResumoFour-wave mixing experiments are used to study the variation of the third-order susceptibility χ(3), with frequency difference Δω and laser intensity I in low carrier concentration HgCdTe crystals. At small Δω, χ(3) is caused by nonparabolicity of free electrons generated by two-photon absorption, with χ(3) scaling as Δω−1 and I2/3. The Δω variation of χ(3) indicates that the electron thermalization time is longer than 8 ps. At large Δω, χ(3)≃3×10−8 esu is mainly due to bound electrons.
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