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Polar-optical-phonon and electron-electron scattering in large-bandgap semiconductors

1998; IOP Publishing; Volume: 10; Issue: 30 Linguagem: Inglês

10.1088/0953-8984/10/30/011

1361-648X

B. K. Ridley,

Semiconductor materials and devices

The low-field electron mobility associated with polar-optical-phonon scattering in GaN is calculated from an exact solution of the Boltzmann equation at various electron densities up to . At low electron densities the mobility or , and it decreases with increasing electron density. The standard analytical model for the mobility is found to be reasonably accurate in the non-degenerate regime. The effect of electron-electron scattering is discussed. A new expression for the carrier-carrier scattering rate which embodies the binary nature of the process is advanced and used to estimate the effect of electron-electron scattering on the polar-optical-phonon mobility. Our estimate suggests that electron-electron scattering roughly cancels out the drop in mobility leaving the mobility largely independent of electron density.