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Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film

2004; American Institute of Physics; Volume: 85; Issue: 16 Linguagem: Inglês

10.1063/1.1808885

1520-8842

Wensha Yang, Robert J. Hamers,

Analytical Chemistry and Sensors

We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal behavior characteristic of field-effect transistors. The biomolecular recognition and specificity characteristics were tested using the two antibodies anti IgM and anti-IgG. Electrical measurements show that the Bio-FET device made on an IgG-modified diamond exhibits a response specific to the anti-IgG antibody. Our results demonstrate the ability to fabricate a bio-FET device using a biologically modified diamond thin film.