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Ga 0.72 Al 0.28 As/Ga 0.99 Be 0.01 As heterojunction bipolar transistor grown by molecular beam epitaxy

1986; Institute of Electrical and Electronics Engineers; Volume: 7; Issue: 2 Linguagem: Inglês

10.1109/edl.1986.26317

1558-0563

J.L. Lievin, C. Dubon-Chevall, F. Alexandre, G. Leroux, J. Dangla, D. Ankri,

Semiconductor Lasers and Optical Devices

We report the first heterojunction bipolar transistor (HBT) with base doping level as high as 2 × 10 20 cm -3 . The device is grown by molecular beam epitaxy (MBE) with growth conditions adjusted to keep perfect surface morphology and to avoid dopant diffusion even at ultra-high doping levels. Maximum dc current gain of 10 is observed, for a base thickness of 40 nm. This is a new step in the optimization of HBT's structures for high-speed logic and microwave applications.