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Hybrid Silicon Photonics for Optical Interconnects

2010; IEEE Photonics Society; Volume: 17; Issue: 2 Linguagem: Inglês

10.1109/jstqe.2010.2051798

1558-4542

Martijn J. R. Heck, Hui‐Wen Chen, Alexander W. Fang, Brian R. Koch, Di Liang, Hyundai Park, Matthew N. Sysak, John E. Bowers,

Advanced Photonic Communication Systems

In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. In this platform, a III/V layer is bonded to a fully processed silicon-on-insulator wafer. By changing the bandgap of the III/V quantum wells (QW), low-threshold-current lasers, high-speed modulators, and photodetectors can be fabricated operating at wavelengths of 1.55 μm. With a QW intermixing technology, these components can be integrated with each other and a complete high-speed optical interconnect can be realized on-chip. The hybrid silicon bonding and process technology are fully compatible with CMOS-processed wafers because high-temperature steps and contamination are avoided. Full wafer bonding is possible, allowing for low-cost and large-volume device fabrication.