Optical characterization of polycrystalline silicon before and after thermal oxidation
1985; Elsevier BV; Volume: 125; Issue: 3-4 Linguagem: Inglês
10.1016/0040-6090(85)90227-5
ISSN1879-2731
AutoresP. Montaudon, Michel Debroux, F. Ferrieu, A. Vareille,
Tópico(s)Silicon and Solar Cell Technologies
ResumoEllipsometry in the spectral range 1.25–5 eV was used to characterize the oxidation of polycrystalline silicon (poly-Si). This technique provides an accurate determination of the multilayer structure involved. Thicknesses are measured and information on the microcrystallinity of poly-Si is extracted. The oxidation kinetics of poly-Si under various conditions are reported together with the corresponding macroscopic surface roughnesses. The multilayer thicknesses are used in the determination of the concentration and mobility of the free carriers induced by the phosphorus doping from IR reflectance measurements performed between 400 and 5000 cm−1.
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