Nitrogen passivation of deposited oxides on n 4H–SiC
2002; American Institute of Physics; Volume: 81; Issue: 22 Linguagem: Inglês
10.1063/1.1525058
ISSN1520-8842
AutoresGil Yong Chung, John R. Williams, Tamara Isaacs‐Smith, F. Ren, K. McDonald, L. C. Feldman,
Tópico(s)Copper Interconnects and Reliability
ResumoResults for measurements of interface state density and breakdown field strength are reported for deposited oxides on n 4H–SiC following passivation with nitric oxide. Low-temperature oxides deposited by plasma-enhanced chemical vapor deposition and high-temperature oxides deposited at 950 °C were investigated. Nitrogen passivation of deposited oxides on n 4H–SiC is found to produce interface state densities of 1–2×1012 cm−2 eV−1 at Ec−E=0.1 eV, regardless of variations in oxide deposition procedures that affect the residual interfacial carbon concentration. Breakdown field strengths were higher for passivated high-temperature oxides compared to passivated low-temperature oxides at room temperature and 290 °C. We suggest that additional oxide growth during the NO passivation is the reason for the observed interface state densities.
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