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Magnetoresistance in Antiferromagnetic Metals

1978; Physical Society of Japan; Volume: 45; Issue: 2 Linguagem: Inglês

10.1143/jpsj.45.466

1347-4073

Kan Usami,

Magnetic and transport properties of perovskites and related materials

The magnetoresistance of itinerant electron antiferromagnets is studied on the basis of the two band model where the electrons in one conduction or s-band are the current carriers and are scattered by the spin fluctuations due to the d electrons. The self-consistent renormalization theory of spin fluctuations is applied to the d electrons. The resistivity shows a cusp at the Néel temperature and becomes linear in T at high temperatures. The resistivity under a perpendicular field shows a negative magnetoresistance for small fields and a narrow peak at the antiferromagnetic to paramagnetic transition point H c . In the case of a parallel applied field with the uniaxial anisotropy, we expect a large increase in the magnetoresistance on both sides of the spin flopping transition point. Numerical calculations are made with the use of the free electron gas model with Umklapp processes.