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Synthesis of aluminum oxide thin films by ion beam and vapor deposition technology

1993; Elsevier BV; Volume: 80-81; Linguagem: Inglês

10.1016/0168-583x(93)90813-l

1872-9584

K. Ogata, Kentaro Yamaguchi, Seiichi Kiyama, H. Hirano, Saburo Shimizu, Mamoru Kohata, T. Miyano, Yuichi Setsuhara, Shoji Miyake,

Ga2O3 and related materials

Aluminum oxide films were prepared by evaporation of aluminum and simultaneous bombardment by oxygen ions in the energy region 2–20 keV with the aluminum/oxygen transport ratio in the range 0.5–10. The films were formed at room temperature on substrates of Si(100) wafers. Infrared absorption spectra indicated that the structure of the films was α-type and/or γ-type, and X-ray photoelectron spectra show that the phase structure was determined by both the Al/O transport ratio and the energy of the oxygen ion beams. As a result of the study of the crystalline growth of the films, the X-ray diffraction pattern of the film prepared by 20 keV oxygen ions and a transport ratio of 2.45 showed a peak due to the γ-Al2O3 crystal.