Portal de Periódicos da CAPES

Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures

1986; Physical Society of Japan; Volume: 55; Issue: 1 Linguagem: Inglês

10.1143/jpsj.55.57

1347-4073

Yasuaki Masumoto, Seigo Tarucha, Hiroshi Okamoto,

Advancements in Semiconductor Devices and Circuit Design

Absorption saturation of the lowest excitons under the high density excitation is studied in GaAs-AlAs multi-quantum-well structures. Saturation characteristics remarkably depend on the well layer thickness ranging from 53Å to 154Å. These saturation characteristics and possible mechanisms are discussed.